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LT3751EUFD bảng dữ liệu(PDF) 23 Page - Linear Technology

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LT3751EUFD bảng dữ liệu(HTML) 23 Page - Linear Technology

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LT3751
23
3751f
APPLICATIONS INFORMATION
Board Layout
The high voltage operation of the LT3751 demands careful at-
tention to the board layout, observing the following points:
1. Minimize the area of the high voltage end of the second-
ary winding.
2. Provide sufficient spacing for all high voltage nodes
(NMOS drain, VOUT and secondary winding of the
transformer) in order to meet the breakdown voltage
requirements.
3. Keep the electrical path formed by CVTRANS, the primary
of T1, and the drain of the NMOS as short as possible.
Increasing the length of this path effectively increases
the leakage inductance of T1, potentially resulting in an
overvoltage condition on the drain of the NMOS.
4. Reduce the total node capacitance on the RVOUT and
RDCM pins by removing any ground or power planes
underneath the RDCM and RVOUT pads and traces.
Parasitic capacitance can cause unwanted behavior
on these pins.
5. Thermal vias should be added underneath the Exposed
Pad, Pin 21, to enhance the LT3751’s thermal perfor-
mance. These vias should go directly to a large area of
ground plane.
6. Isolated applications require galvanic separation of the
output-side ground and primary-side ground. Adequate
spacing between both ground planes is needed to meet
voltage safety requirements.



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