KI1304BDL datasheet(2/2 Pages) KEXIN

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SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDS

VGS =0V, ID =250

VDS Temperature Coefficient

VDS/TJ

27.3

VGS(th) Temperature Coefficient

VGS(th)/TJ

Gate threshold voltage

VGS(th)

VDS =VGS,ID =250

0.6

1.3

Gate-body leakage

IGSS

VDS =0V, VGS =

12 V

100

VDS =30 V, VGS =0V

VDS =30 V, VGS =0V, TJ =70

On-state drain current

ID(on)

VDS

5V, VGS =4.5 V

VGS =4.5 V, ID =0.9

0.216 0.270

VGS =2.5V, ID =0.75

0.308 0.385

Forward transconductance

gfs

VDS =15 V, ID =0.9

Input Capacitance

Ciss

100

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total gate charge *

VDS =15V ,VGS =4.5 V , ID=0.9

1.8

2.7

Total gate charge *

1.1

1.7

Gate-source charge *

Qgs

0.4

Gate-drain charge *

Qgd

0.6

Gate Resistance

f=1MHz

1.5

2.3

td(on)

td(off)

525

Continuous Source-Drain Diode Current

TC = 25

0.31

Pulse Diode Forward Current*

ISM

Body Diode Voltage

VSD

IS = 0.28 A

0.8

1.2

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

105

160

Reverse Recovery Fall Time

Reverse Recovery Rise Time

* Pulse test: PW

300 ìs duty cycle

2%.

Zero gate voltage drain current

IDSS

Drain-source on-state resistance

rDS(on)

VDD =15V , RL =22

ID =0.68A , VGEN =4.5V , RG =1

Turn-off time

Turn-on time

IF=0.28A,di/dt=100A/

s,TJ=25

mv/

VDS =15V ,VGS =2.5 V , ID=0.9

ID=250

VDS =15V, VGS = 0 V,f= 1 MHz

KI1304BDL

Marking

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