TCM680 datasheet(2/7 Pages) TELCOM

2 / 7 page

4-14

TELCOM SEMICONDUCTOR, INC.

TCM680

+5V TO

±10V VOLTAGE CONVERTER

ABSOLUTE MAXIMUM RATINGS*

VIN ..................................................................................................... +6.0V

OUT .............................................................................................. +12.0V

–

OUT ............................................................................................. – 12.0V

–

OUT Short-Circuit Duration ............................ Continuous

OUT Current ............................................................ 75mA

VIN dV/dT .............................................................. 1V/µsec

Figure 1. Test Circuit

ELECTRICAL CHARACTERISTICS: VIN = +5V, TA = +25°C, test circuit Figure 1, unless otherwise indicated.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Supply Voltage Range

MIN.

≤ TA ≤ MAX., RL = 2kΩ

2.0

1.5 to 5.5

5.5

Supply Current

VIN = 3V, RL = ∞

—

0.5

VIN = 5V, RL = ∞

—1

VIN = 5V, 0°C ≤ TA ≤ +70°C, RL = ∞

—

2.5

VIN = 5V, – 40°C ≤ TA ≤ +85°C, RL = ∞

——

Negative Charge Pump Output

– = 10mA, I

+ = 0mA, VIN = 5V

—

140

180

Ω

Source Resistance

–= 5mA, I

+ = 0mA, VIN = 2.8V

—

180

250

–= 10mA, I

+ = 0mA, VIN = 5V:

°C ≤ TA ≤ +70°C

—

220

– 40

°C ≤ TA ≤ +85°C

—

250

Positive Charge Pump Output

+ = 10mA, I

– = 0mA, V

IN = 5V

—

140

180

Ω

Source Resistance

+ = 5mA, I

– = 0mA, V

IN = 2.8V

—

180

250

+ = 10mA, I

– = 0mA, V

IN = 5V:

°C ≤ TA ≤ +70°C

—

220

– 40

°C ≤ TA ≤ +85°C

—

250

FOSC

Oscillator Frequency

—

kHz

PEFF

Power Efficiency

RL = 2kΩ

—85—

VOUT EFF

Voltage Conversion Efficiency

OUT, RL =

∞

—

–

OUT, RL =

∞

—

TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums

and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of

any circuits described herein and makes no representations that they are free from patent infringement.

Power Dissipation (TA ≤ 70°C)

Plastic DIP ...................................................... 730mW

Small Outline .................................................. 470mW

Storage Temperature ............................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

VOUT

GND

TCM680

4.7

µF

4.7

µF

VOUT

–

PIN DESCRIPTION

8-Pin

DIP/SOIC

Symbol

Description

1C1

–

Input. Capacitor C1 negative terminal.

2C2

Input. Capacitor C2 positive terminal.

3C2–

Input. Capacitor C2 negative terminal.

–

OUT

Output. Negative output voltage (–2VIN).

GND

Input. Device ground.

6VIN

Input. Power supply voltage.

7C1

Input. Capacitor C1 positive terminal.

OUT

Output. Positive output voltage (+2VIN)

*Stresses above those listed in "Absolute Maximum Ratings" may cause

permanent damage to the device. These are stress ratings only and

functional operation of the device at these or other conditions above those

indicated in the operation section of the specification is not implied.

Exposure to the Absolute Maximum Ratings conditions for extended

periods of time may affect device reliability.

TCM680 bảng dữ liệu(PDF) 2 Page - TelCom Semiconductor, Inc

TCM680 bảng dữ liệu(HTML) 2 Page - TelCom Semiconductor, Inc

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL