TC4420 datasheet(2/5 Pages) TELCOM

2 / 5 page

4-226

TELCOM SEMICONDUCTOR, INC.

6A HIGH-SPEED MOSFET DRIVERS

TC4420

TC4429

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.4

1.8

—

VIL

Logic 0 Low Input Voltage

—

1.3

0.8

VIN (Max)

Input Voltage Range

–5

—

VDD+0.3

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

Output

VOH

High Output Voltage

See Figure 1

VDD – 0.025

—

VOL

Low Output Voltage

See Figure 1

—

0.025

Output Resistance, High

IOUT = 10 mA, VDD = 18V

—

2.1

2.8

Ω

Output Resistance, Low

IOUT = 10 mA, VDD = 18V

—

1.5

2.5

Ω

IPK

Peak Output Current

VDD = 18V (See Figure 5)

—

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

1.5

—

Withstand Reverse Current

≤ 300 µs

Switching Time (Note 1)

Rise Time

Figure 1, CL = 2500 pF

—

nsec

Fall Time

Figure 1, CL = 2500 pF

—

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V

—

0.45

1.5

VIN = 0V

—

150

µA

VDD

Operating Input Voltage

4.5

—

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage ............................................... – 5V to > VDD

Input Current (VIN > VDD) .........................................50mA

Power Dissipation, TA ≤ 70°C

PDIP ...............................................................730mW

SOIC ...............................................................470mW

CerDIP ............................................................ 800mW

5-Pin TO-220 ...................................................... 1.6W

Package Power Dissipation (TA ≤ 70°C)

5-Pin TO-220 (With Heat Sink) ......................... 1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/

°C

SOIC ............................................................. 4mW/

°C

CerDIP ....................................................... 6.4mW/

°C

5-Pin TO-220 .............................................. 12mW/

°C

Thermal Impedances (To Case)

5-Pin TO-220 RθJ-C ........................................ 10°C/W

Storage Temperature Range ................ – 65

°C to +150°C

Operating Temperature (Chip) .............................. +150

°C

Operating Temperature Range (Ambient)

C Version ............................................... 0

°C to +70°C

I Version ........................................... – 25

°C to +85°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

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