IRF640 datasheet(2/6 Pages) SUNTAC

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IRF640

POWER

MOSFET

Page 2

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25

CIRF640

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250

V(BR)DSS

200

Drain-Source Leakage Current

(VDS = Rated VDSS, VGS = 0 V)

(VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125

)

IDSS

0.025

1.0

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

IGSSF

100

Gate-Source Leakage Current-Reverse

(Vgsr = 20 V, VDS = 0 V)

IGSSR

100

Gate Threshold Voltage

(VDS = VGS, ID = 250

VGS(th)

2.0

4.0

Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) *

RDS(on)

0.18

Drain-Source On-Voltage (VGS = 10 V)

(ID = 5.0 A)

VDS(on)

6.0

Forward Transconductance (VDS = 50 V, ID = 10 A) *

gFS

6.8

mhos

Input Capacitance

Ciss

1600

Output Capacitance

Coss

750

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Crss

300

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

(VDD = 30 V, ID = 10 A,

VGS = 10 V,

RG = 4.7 ) *

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

(VDS = 0.8Rated VDSS, ID = Rated ID,

VGS = 10 V)*

Qgd

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

VSD

1.5

Forward Turn-On Time

ton

Reverse Recovery Time

(IS = Rated ID,

dIS/dt = 100A/µs)

trr

450

* Pulse Test: Pulse Width

300µs, Duty Cycle

** Negligible, Dominated by circuit inductance

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