BLF578_1

© NXP B.V. 2008. All rights reserved.

Objective data sheet

Rev. 01 — 11 December 2008

2 of 14

NXP Semiconductors

BLF578

Power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

drain1

2

drain2

3

gate1

4

gate2

5

source

[1]

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF578

-

flanged balanced LDMOST ceramic package;

2 mounting holes; 4 leads

SOT539A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

110

V

gate-source voltage

−0.5

+11

V

drain current

-

112

A

storage temperature

−65

+150

°C

junction temperature

-

225

°C