BCP69 datasheet(6/13 Pages) NXP

6 / 13 page

BCP69_6

Product data sheet

Rev. 06 — 2 December 2008

6 of 13

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −25 V; IE =0A

−100

VCB = −25 V; IE =0A;

Tj = 150 °C

−10

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100

hFE

DC current gain

BCP69

VCE = −10 V;

IC = −5mA

VCE = −1V;

IC = −500 mA

375

VCE = −1 V; IC = −1A

BCP69-16

BCP69-16/DG

VCE = −1V;

IC = −500 mA

100

250

BCP69-16/IN

VCE = −1V;

IC = −500 mA

140

230

BCP69-25

VCE = −1V;

IC = −500 mA

160

375

VCEsat

collector-emitter

saturation voltage

IC = −1A;

IB = −100 mA

−500

VBE

base-emitter voltage

VCE = −10 V;

IC = −5mA

−700

VCE = −1 V; IC = −1A

−1V

collector capacitance

VCB = −10 V;

IE =ie =0A;

f=1MHz

-28

transition frequency

VCE = −5V;

IC = −50 mA;

f = 100 MHz

140

MHz

BCP69 bảng dữ liệu(PDF) 6 Page - NXP Semiconductors

BCP69 bảng dữ liệu(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

bảng dữ liệu tải về

Link URL