BAT760_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 17 October 2008

2 of 9

NXP Semiconductors

BAT760

Medium power Schottky barrier single diode

2.

Pinning information

[1]

The marking bar indicates the cathode.

3.

Ordering information

4.

Marking

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

cathode

[1]

2

anode

2

1

sym001

12

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAT760

SC-76

plastic surface-mounted package; 2 leads

SOD323

Table 4.

Marking codes

Type number

Marking code

BAT760

A4

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

20

V

forward current

-

1

A

non-repetitive peak

forward current

half-sine wave;

JEDEC method

-5

A

junction temperature

-

125

°C

ambient temperature

−65

+125

°C

storage temperature

−65

+150

°C