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TSDF1920W bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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TSDF1920W bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() TSDF1920W Document Number 85092 Rev. 1.4, 05-Sep-08 Vishay Semiconductors www.vishay.com 1 16712 2 1 3 4 Electrostatic sensitive device. Observe precautions for handling. Not for new design, this product will be obsoleted soon 25 GHz Silicon NPN Planar RF Transistor Features • Very low noise figure • Very high power gain • High transition frequency fT = 24 GHz • Low feedback capacitance • Emitter pins are thermal leads • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For RF front-ends, low noise, and wideband applica- tions, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors. Mechanical Data Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Part Marking Package TSDF1920W YH3 SOT-343R Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 3.5 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Junction ambient 1) RthJA 450 K/W e3 |
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