MBRF10H100CTHE3SLASH45 datasheet(3/5 Pages) VISHAY

tên linh kiện	MBRF10H100CTHE3/45

Giải thích chi tiết về linh kiện	Dual Common-Cathode High-Voltage Schottky Rectifier

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MBR(F,B)10H90CT & MBR(F,B)10H100CT

Vishay General Semiconductor

Document Number: 88668

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

0.1

0.3

1.1

0.5

100

0.1

0.01

0.7

0.9

J = 100 °C

J = 150 °C

J = 125 °C

J = 175 °C

J = 25 °C

J = - 40 °C

Instantaneous Forward Voltage (V)

0.1

100

1000

10 000

0.01

100

Percent of Rated Peak Reverse Voltage (%)

J = 100 °C

J = 150 °C

J = 125 °C

J = 25 °C

100

1000

0.1

Reverse Voltage (V)

Figure 6. Typical Transient Thermal Impedance Per Diode

Figure 7. Typical Transient Thermal Impedance Per Diode

0.01

100

0.1

t - Pulse Duration (s)

Junction to Case

MBRF

0.1

100

0.01

0.1

100

t - Pulse Duration (s)

MBRF

Junction to Case

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