New Product

B2S, B4S & B6S

Vishay General Semiconductor

Document Number: 88893

Revision: 01-Feb-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Miniature Glass Passivated Single-Phase

Surface Mount Bridge Rectifier

FEATURES

• UL recognition, file number E54214

• Saves space on printed circuit boards

• Ideal for automated placement

• Middle surge current capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 250 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

General purpose use in ac-to-dc bridge full wave

rectification for power supply, lighting ballaster, battery

charger, home appliances, office equipment, and

telecommunication applications.

MECHANICAL DATA

Case: TO-269AA (MBS)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked on body

PRIMARY CHARACTERISTICS

0.5 A

200 V, 400 V, 600 V

30 A

5 µA

1.0 V

150 °C

TO-269AA (MBS)

~

~

~

~

Note:

(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads

PARAMETER

SYMBOL

B2S

B4S

B6S

UNIT

Device marking code

B2

B4

B6

Maximum repetitive peak reverse voltage

200

400

600

V

Maximum RMS voltage

140

280

420

V

Maximum DC blocking voltage

200

400

600

V

Maximum average forward output rectified current on

glass-epoxy P.C.B. (Fig. 1)

A

Peak forward surge current 10 msec single half sine-wave

superimposed on rated load

30

A

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Max. instantaneous forward voltage drop per diode

0.5 A

1.0

V

Maximum DC reverse current at rated DC blocking

voltage per diode

5.0

100

µA

Typical junction capacitance per diode

4.0 V, 1 MHz

13

pF