New Product

B2M, B4M & B6M

Vishay General Semiconductor

Document Number: 88898

Revision: 01-Feb-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Voltage Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

0.5

0.7

0.9

1.1

1.3

Instantaneous Forward Voltage (V)

T

T

T

20

40

60

80

100

0.01

0.1

1

10

100

90

70

50

30

10

1000

T

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

1

10

100

Reverse Voltage (V)

0.106 (2.70)

0.090 (2.30)

0.147 (3.73)

0.137 (3.48)

0.161 (4.10)

0.144 (3.65)

0.190 (4.83)

0.179 (4.55)

0.029 (0.74)

0.017 (0.43)

0.105 (2.67)

0.095 (2.41)

0.205 (5.21)

0.195 (4.95)

10° to 15°

0.028 (0.71)

0.020 (0.51)

0.016 (0.41)

0.006 (0.15)

0.148 (3.75)

0.132 (3.35)

0.049 (1.24)

0.039 (0.99)

Case Style MBM