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M62002FP bảng dữ liệu(PDF) 3 Page - Renesas Technology Corp

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M62001L/FP to M62008L/FP
Rev.1.00 Sep 14, 2005 page 3 of 9
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise noted)
Item
Symbol
Ratings
Unit
Conditions
Supply voltage
VCC
8
V
Output sink current
Isink
5
mA
Power dissipation
Pd
440
mW
Thermal derating
K
θ
4.4
mW/°C
Ta
≥ 25°C
Operating temperature
Topr
–20 to +75
°C
Storage temperature
Tstg
–40 to +125
°C
Electrical Characteristics
(Ta = 25°C, unless otherwise noted)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
4.30
4.45
4.60
M62001, M62002,
M62005, M62006,
Supply voltage
VS
4.05
4.25
4.45
Interruption level during VCC drop
(Equivalent to VSL)
M62003, M62004,
M62007, M62008,
Battery voltage
VBATT
2.00
2.15
2.30
V
Reset level at backup
Hysteresis voltage
∆V
S
—
100
—
mV
∆V
S = VSH – VSL
—
5.0
20
VCC = 5.0V: in normal mode
Circuit current
ICC
—
1.0
4
µA
VCC = 2.5V: in backup mode
Sink ability
Vsat1
—
0.2
0.4
VCC = 4V, IO = 4mA
(Output saturation voltage of N-ch transistor)
Source ability
Vsat2
—
0.2
0.4
V
VCC = 4V, IO = 1mA
(Output saturation voltage of P-ch transistor)
[CMOS output] M62001, M62003, M62005, M62007
Delay time
td
—
50
—
ms
External capacitance Cd = 0.33
µF
Pulse width
tpw
—
7
10
µs
Output pulse width (M62001, M62002, M62003, M62004)
Reset output
response time
tRESET
—
30
—
µs
Time between VCC (when falling) = VBATT and output of
RESET signal
Interruption output
reset time
tINT
—
100
—
µs
Time between VCC (when falling) = VS and output of INT
signal
Summary of M62001L/FP to M62008L/FP
Type No.
Supply Voltage Detection
Level VS (V)
Battery Voltage Detection
Level VBATT (V)
Output Form
Interruption Signal
Output Mode
M62001L/FP
CMOS
M62002L/FP
4.45
Open drain
M62003L/FP
CMOS
M62004L/FP
4.25
Open drain
Pulse output
M62005L/FP
CMOS
M62006L/FP
4.45
Open drain
M62007L/FP
CMOS
M62008L/FP
4.25
2.15
Open drain
Hold output



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