GSIB640 datasheet(3/4 Pages) VISHAY

tên linh kiện	GSIB640

Giải thích chi tiết về linh kiện	Single-Phase Single In-Line Bridge Rectifiers

PDF	4 Pages

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nhà sản xuất	VISHAY [Vishay Siliconix]

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GSIB620 thru GSIB680

Vishay General Semiconductor

Document Number: 88648

Revision: 31-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in millimeters

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.3

1.1

0.01

0.1

100

0.5

0.7

0.9

Instantaneous Forward Voltage (V)

J = 150 °C

J = 125 °C

J = 25 °C

0.4

1.2

0.6

0.8

1.0

1000

100

0.01

0.1

100

J = 150 °C

J = 125 °C

J = 25 °C

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

0.1

100

1000

Reverse Voltage (V)

0.01

0.1

100

0.1

100

t - Heating Time (s)

2.5 ± 0.2

2.2 ± 0.2

1 ± 0.1

10 ± 0.2

7.5

± 0.2

2.7 ± 0.2

0.7 ± 0.1

4.6 ± 0.2

3.6 ± 0.2

7.5

± 0.2

30 ± 0.3

Case Style GSIB-5S

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