MBR20T100CT datasheet(2/7 Pages) VISHAY

2 / 7 page

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94534

Revision: 15-Oct-08

MBR20T100CT

Vishay High Power Products

High Performance

Schottky Generation 5.0,

2 x 10 A

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop per leg

VFM (1)

10 A

TJ = 25 °C

-0.79

20 A

0.88

10 A

TJ = 125 °C

-0.68

20 A

0.80

Reverse leakage current per leg

IRM (1)

TJ = 25 °C

VR = Rated VR

100

µA

TJ = 125 °C

Junction capacitance per leg

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

400

Series inductance per leg

Measured lead to lead 5 mm from package body

8.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

TJ, TStg

- 55 to 175

°C

Maximum thermal resistance,

junction to case per leg

RthJC

DC operation

°C/W

Maximum thermal resistance,

junction to case per device

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.5

Approximate weight

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AB

MBR20T100CT

MBR20T100CT bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

MBR20T100CT bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL