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VB20150C bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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VB20150C bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() New Product V20150C, VF20150C, VB20150C & VI20150C Vishay General Semiconductor Document Number: 89046 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 150 V IFSM 120 A VF at IF = 10 A 0.69 V TJ max. 150 °C TO-220AB V20150C VF20150C 1 2 3 PIN 1 PIN 2 CASE PIN 3 PIN 1 PIN 2 PIN 3 TMBS ® ITO-220AB VI20150C TO-262AA PIN 1 PIN 2 PIN 3 K VB20150C PIN 1 PIN 2 K HEATSINK 1 2 K TO-263AB 1 K 2 3 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20150C VF20150C VB20150C VI20150C UNIT Maximum repetitive peak reverse voltage VRRM 150 V Maximum average forward rectified current (Fig. 1) per device per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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