IRFPF30 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91249

S-Pending-Rev. A, 26-Jun-07

IRFPF30, SiHFPF30

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-1.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

900

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

1.1

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 900 V, VGS = 0 V

100

µA

VDS = 720 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.2 Ab

3.7

Forward Transconductance

gfs

VDS = 100 V, ID = 2.2 Ab

2.3

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1200

Output Capacitance

Coss

320

Reverse Transfer Capacitance

Crss

200

Total Gate Charge

VGS = 10 V

ID = 3.6 A, VDS = 360 V

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 450 V, ID = 3.6 A,

RG = 12 Ω, RD = 120 Ω, see fig. 10b

-14

Rise Time

-25

Turn-Off Delay Time

td(off)

-90

Fall Time

-30

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

Internal Source Inductance

-13

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

3.6

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb

1.8

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb

430

650

Body Diode Reverse Recovery Charge

Qrr

-1.4

2.1

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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