IRFP450 datasheet(1/8 Pages) VISHAY

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Document Number: 91233

www.vishay.com

S-81271-Rev. A, 16-Jun-08

1

Power MOSFET

IRFP450, SiHFP450

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).

c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (Ω)VGS = 10 V

0.40

Qg (Max.) (nC)

150

Qgs (nC)

20

Qgd (nC)

80

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP450PbF

SiHFP450-E3

SnPb

IRFP450

SiHFP450

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

14

A

TC = 100 °C

8.7

Pulsed Drain Currenta

IDM

56

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energyb

EAS

760

mJ

Repetitive Avalanche Currenta

IAR

8.7

A

Repetitive Avalanche Energya

EAR

19

mJ

Maximum Power Dissipation

TC = 25 °C

PD

190

W

Peak Diode Recovery dV/dtc

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Số phần tương tự - IRFP450

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	IRFP450	90Kb / 8P	N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRFP450	212Kb / 5P	N-CHANNEL POWER MOSFETS
Intersil Corporation	IRFP450	55Kb / 7P	14A, 500V, 0.400 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFP450	169Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
IXYS Corporation	IRFP450	46Kb / 2P	Standard Power MOSFET - N-Channel Enhancement Mode

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