T835-600 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

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P(W)

α=180°

α=120°

α=90°

a=60°

α=30°

(A)

T(RMS)

Fig. 1: Maximum power dissipation versus RMS

on-state current.

100

125

(A)

T(RMS)

α=180°

Tcase(°C)

Fig. 3: RMS on-state current versus case tem-

perature.

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

I ,I [Tj]/I ,I [Tj=25°C]

GT H

IGT

Tj(°C)

Fig. 5: Relative variation of gate trigger current and

holding current versus junction temperature (typi-

cal values).

120

110

125

115

100

120

140

P(W)

Tcase (°C)

α=180°

Rth=0°C/W

Rth=2°C/W

Rth=5°C/W

Rth=8°C/W

Tamb(°C)

Fig. 2: Correlation between maximum power dissi-

pation and maximum allowable temperatures

(Tamb and Tcase) for different thermal resistances

heatsink+contact.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

K=[Zth/Rth]

Zth(j-c)

Zth(j-a)

tp(s)

Fig. 4 : Relative variation of thermal impedance

versus pulse duration.

100

1000

Number of cycles

ITSM(A)

Tj initial=25°C

F=50Hz

Fig. 6: Non repetitive surge peak on-state current

versus number of cycles.

T835-600G / T850-600G

3/5

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