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12P10L-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 12P10L-TN3-R
Giải thích chi tiết về linh kiện  100V P-CHANNEL MOSFET
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12P10L-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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12P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-262.a
ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-9.4
A
Pulsed Drain Current (Note 2)
IDM
-37.6
A
Avalanche Current (Note 2)
IAR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
370
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.0
V/ns
Power Dissipation
Ta= 25°C
50
W
Derate above 25°C
PD
0.4
W/°C
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
110
℃
/W
Junction-to-Case
θJC
2.5
℃
/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-100
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
ID=-250µA,
Referenced to 25°C
-0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-4.7A
0.24
0.29
Ω
Forward Transconductance
gFS
VDS =-40V, ID=-4.7A (Note 1)
6.3
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
620
800
pF
Output Capacitance
COSS
220
290
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
65
85
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
21
27
nC
Gate Source Charge
QGS
4.6
nC
Gate Drain Charge
QGD
VDS=-80V, ID=-11.5A,
VGS=-10V(Note 1, 2)
11.5
nC
Turn-ON Delay Time
tD(ON)
15
40
ns
Turn-ON Rise Time
tR
160
330
ns
Turn-OFF Delay Time
tD(OFF)
35
80
ns
Turn-OFF Fall-Time
tF
VDD=-50V, ID=-11.5A,
RG=25Ω(Note 1, 2)
60
130
ns



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