New Product

DF005MA thru DF10MA

Vishay General Semiconductor

Document Number: 88572

Revision: 14-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

0.1

1

10

100

t - Heating Time (s)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.335 (8.51)

0.320 (8.12)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)