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H838532H bảng dữ liệu(PDF) 171 Page - Renesas Technology Corp |
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H838532H bảng dữ liệu(HTML) 171 Page - Renesas Technology Corp |
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171 / 508 page ![]() Section 6 ROM Rev. 1.00 May 30, 2008 Page 151 of 484 REJ09B0436-0100 6.7.5 Auto-Erase Mode 1. Auto-erase mode supports only entire memory erasing. 2. Do not perform a command write during auto-erasing. 3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin). 4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long as the next command write has not been performed, reading is possible by enabling CE and OE. 5. Table 6.14 shows the AC characteristics. Table 6.14 AC Characteristics in Auto-Erase Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Notes Command write cycle t nxtc 20 — µs Figure 6.12 CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns Status polling start time t ests 1 — ms Status polling access time t spa — 150 ns Memory erase time t erase 100 40000 ms WE rise time t r — 30 ns WE fall time t f — 30 ns |
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