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DG2011 bảng dữ liệu(PDF) 3 Page - Vishay Siliconix |
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DG2011 bảng dữ liệu(HTML) 3 Page - Vishay Siliconix |
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3 / 8 page ![]() Document Number: 70102 S-60004–Rev. F, 16-Jan-06 www.vishay.com 3 Vishay Siliconix DG2011 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ±10 %,VIN = 0.4 V or 2.0 V e Tempa Limits –40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 0.9 V/1.5 V INO, INC = 50 mA Room Full 1.8 2.7 2.9 Ω rON Match Δr ON Room 0.2 rON Flatness rON Flatness Room 0.2 0.5 Switch Off Leakage Current INO(off) INC(off) V+ = 3.3 V, VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V Room Full - 1 - 10 1 10 nA ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full - 1 - 10 1 10 Digital Control Input High Voltage VINH Full 1.6 V Input Low Voltage VINL Full 0.4 Input Capacitance Cin Full 4 pF Input Current IINL or IINH VIN = 0 or V+ Full 1 1 µA Dynamic Characteristics Turn-On Time tON VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Room Full 45 75 77 ns Turn-Off Time tOFF Room Full 29 59 62 Break-Before-Make Time tBBM Room 116 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω Room 2 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 62 dB Crosstalkd XTALK Room - 68 NO, NC Off Capacitance d CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz Room 28 pF Channel-On Capacitanced CON Room 84 Power Supply Power Supply Range V+ 1.8 5.5 V Power Supply Current I+ VIN = 0 or V+ 0.01 1.0 µA Power Consumption PC 3.3 µW |
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