W8NB80 datasheet(1/5 Pages) STMICROELECTRONICS

tên linh kiện	W8NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET

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STW8NB80

N - CHANNEL 800V - 1.2

Ω - 7.5A - TO-247

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.2

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

INTERNAL SCHEMATIC DIAGRAM

January 1999

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

7.5

A

ID

Drain Current (continuous) at Tc = 100

oC

4.7

A

IDM(

•)

Drain Current (pulsed)

30

A

Ptot

Total Dissipation at Tc = 25

o C

170

W

Derating Factor

1.36

W/

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 7.5 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW8NB80

800 V

< 1.6

Ω

7.5 A

1/5

Số phần tương tự - W8NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	W8NB100	50Kb / 5P	N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET Mar-1999

More results

Mô tả tương tự - W8NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999
	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW11NB80	87Kb / 8P	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET Jul-1999
	STW7NB80	88Kb / 8P	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET Dec-1999
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET Jul-2000
	STW8NB100	50Kb / 5P	N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET Mar-1999
	STW9NB80	86Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW9NC70Z	248Kb / 8P	N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH™ II MOSFET Mar-2001
	STW9NC80Z	248Kb / 8P	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET Sep-2002
MagnaChip Semiconductor...	MMF80R1K2PB	1Mb / 10P	800V 1.2ohm N-channel MOSFET

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