W7NB80 datasheet(1/8 Pages) STMICROELECTRONICS

tên linh kiện	W7NB80

Giải thích chi tiết về linh kiện	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

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STW7NB80

N-CHANNEL 800V - 1.6

Ω - 6.5A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

800

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC6.5

A

ID

Drain Current (continuous) at Tc =100

oC4.1

A

IDM (

•)

Drain Current (pulsed)

26

A

Ptot

T otal Dissipat ion at Tc =25

oC

160

W

Derating Factor

1.28

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) I SD

≤ 6 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 7NB80

800 V

< 1.9

Ω

6. 5 A

December 1999

1

2

3

TO-247

1/8

Số phần tương tự - W7NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
New Jersey Semi-Conduct...	W7NA80	154Kb / 3P	N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

More results

Mô tả tương tự - W7NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999
	STP7NC80Z	542Kb / 13P	N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET May-2003
	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW11NB80	87Kb / 8P	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET Jul-1999
	STW5NB90	85Kb / 8P	N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET Mar-1999
	STW6NB90	51Kb / 5P	N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET Feb-1999
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET Jul-2000
	STW8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999
	STW9NB80	86Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW9NC80Z	248Kb / 8P	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET Sep-2002

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