R8C2K datasheet(414/471 Pages) RENESAS

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R8C/2K Group, R8C/2L Group

20. Flash Memory

Rev.1.10

Dec 21, 2007

Page 397 of 450

REJ09B0406-0110

20.7.1.4

How to Access

Write 0 before writing 1 when setting Bits FMR01, FMR02 in the FMR0 register, or FMR11 bit in the FMR1

20.7.1.5

Rewriting User ROM Area

In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is

stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be

rewritten correctly. In this case, use standard serial I/O mode.

20.7.1.6

Program

Do not write additions to the already programmed address.

20.7.1.7

Suspend

Do not use the block erase command during program-suspend.

20.7.1.8

Entering Stop Mode or Wait Mode

Do not enter stop mode or wait mode during erase-suspend.

20.7.1.9

Program and Erase Voltage for Flash Memory

To perform programming and erasure, use VCC = 2.7 V to 5.5 V as the supply voltage. Do not perform

programming and erasure at less than 2.7 V.

R8C2K bảng dữ liệu(PDF) 414 Page - Renesas Technology Corp