W15NB50 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	W15NB50

Giải thích chi tiết về linh kiện	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

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STW15NB50

STH15NB50FI

N-CHANNEL 500V - 0.33

Ω - 14.6A -

T0-247/ISOWATT218 PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.33

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STW 15NB50

ST H15NB50FI

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C

14.6

10. 5

A

ID

Drain Current (continuous) at Tc =100

oC9.2

6.6

A

IDM(

•)

Drain Current (pulsed)

58.4

58. 4

A

Ptot

Tot al Dissipation at Tc =25

oC190

80

W

Derating F act or

0.64

1. 52

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ ns

VISO

Insulat ion Withstand Volt age (DC)

4000

V

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

TYPE

VDSS

RDS(on)

ID

ST W15NB50

ST H15NB50FI

500 V

<0.36

Ω

< 0.36 Ω

14.6 A

10.5 A

June 1998

1

2

3

TO-247

ISOWATT218

1

2

3

1/9

Số phần tương tự - W15NB50

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	W15NA50	243Kb / 11P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Nov-1996
STMicroelectronics	W15NK90Z	208Kb / 9P	N-CHANNEL 900V-0.40ohm-15A TO-247 Zener-Protected SuperMESH MOSFET Apr-2004
Inchange Semiconductor ...	W15NK90Z	273Kb / 2P	isc N-Channel MOSFET Transistor

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Mô tả tương tự - W15NB50

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	IRFP450	90Kb / 8P	N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET Aug-1998
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET Feb-2002
	STW11NB80	87Kb / 8P	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET Jul-1999
	STW13NB60	111Kb / 9P	N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET Jan-2000
	STW14NB50	50Kb / 5P	N-CHANNEL 500V - 0.40 ohm - 14A - TO-247 PowerMESH MOSFET Apr-1999
	STW18NB40	142Kb / 7P	N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET Jun-2002
	STW20NB50	86Kb / 8P	N - CHANNEL 500V - 0.22ohm - 20A - TO-247 PowerMESH MOSFET Oct-1999
	STW20NC50	249Kb / 8P	N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh™ I MOSFET May-2001
	STW8NB90	311Kb / 9P	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET Jul-2001
New Jersey Semi-Conduct...	IRFP450	841Kb / 3P	N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH??MOSFET

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