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HA16121FPJ bảng dữ liệu(PDF) 13 Page - Renesas Technology Corp |
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HA16121FPJ bảng dữ liệu(HTML) 13 Page - Renesas Technology Corp |
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13 / 34 page ![]() HA16116FP/FPJ, HA16121FP/FPJ Rev.2.0, Sep.18.2003, page 13 of 33 4. Totem Pole Output Stage Circuit and Power MOS FET Driving Method The output stage of this IC series is configured of totem pole circuits, allowing direct connection to a power MOS FET as an external switching device, so long as V IN is below the gate breakdown voltage. If there is a possibility that V IN will exceed the gate breakdown voltage of the power MOS FET, a Zener diode circuit like that shown figure 4.1 or other protective measures should be used. The figure 4.1 shows an example using a P-channel power MOS FET. Bias circuit P.VIN VO OUT Zener diode for gate protection Drive circuit Gate protection resistor E.g.: VIN = 18 V Schottky barrier diode + − Figure 4.1 P-channel Power MOS FET (example) 5. Vref Undervoltage Error Prevention (UVL) and Overvoltage Protection (OVP) Functions 5.1 Operation Principles The reference voltage circuit is equipped with UVL and OVP functions. • UVL In normal operation the Vref output voltage is fixed at 2.5 V. If V IN is lower than normal, the UVL circuit detects the Vref output voltage with a hysteresis of 1.7 V and 2.0 V, and shuts off the PWM output if Vref falls below this level, in order to prevent malfunction. • OVP The OVP circuit protects the IC from inadvertent application of a high voltage from outside, such as if V IN is shorted. A Zener diode (5.6 V) and resistor are used between Vref and GND for overvoltage detection. PWM output is shut off if Vref exceeds approximately 7.0 V. Note that the PWM output pulse logic and the precision of the switching regulator output voltage are not guaranteed at an applied voltage of 2.5 V to 7 V. |
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