H7N1002LS datasheet(3/9 Pages) RENESAS

tên linh kiện	H7N1002LS

Giải thích chi tiết về linh kiện	Silicon N Channel MOS FET High Speed Power Switching

PDF	9 Pages

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3 / 9 page

H7N1002LD, H7N1002LS, H7N1002LM

Rev.7.00 Apr 07, 2006 page 3 of 8

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

200

100

150

100

150

200

0246

3.4 V

3.6 V

01234

–25°C

25°C

Tc = 75°C

VDS = 10 V

Pulse Test

VGS = 3 V

0.1

0.3

100 300

1000

300

100

0.3

0.1

0.03

Ta = 25°C

DC Operation

(Tc = 25°C)

PW = 10 ms

(1shot)

1 ms

100

µs

Operation in

this area is

limited by RDS(on)

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

220

0.5

200

100

VGS = 4.5 V

10 V

Pulse Test

1.0

0.8

0.6

0.4

0.2

4 V

ID = 50 A

20 A

10 A

Pulse Test

10 V

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