HAT2016R datasheet(4/8 Pages) RENESAS

tên linh kiện	HAT2016R

Giải thích chi tiết về linh kiện	Silicon N Channel Power MOS FET High Speed Power Switching

PDF	8 Pages

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4 / 8 page

HAT2016R

Rev.10.00 Sep 07, 2005 page 4 of 7

Case Temperature

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

0.10

0.08

0.02

0.04

0.06

–40

120

160

ID = 1 A, 2 A, 5 A

1 A, 2 A, 5 A

10 V

VGS = 4 V

0.2

0.5

0.2

0.5

25°C

Tc = –25°C

75°C

Pulse Test

VDS = 10 V

Pulse Test

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

0.2

0.5

500

200

100

di / dt = 20 A /

µs

VGS = 0, Ta = 25°C

010

10000

3000

1000

300

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

1624

3240

VGS

VDS

VDD = 5 V

10 V

25 V

VDD = 25 V

10 V

5 V

ID = 6.5 A

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

0.4

0.8

1.2

1.6

2.0

VGS = 0, –5 V

5 V

Pulse Test

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