H7P1002DL datasheet(5/9 Pages) RENESAS

tên linh kiện	H7P1002DL

Giải thích chi tiết về linh kiện	Silicon P Channel MOS FET High Speed Power Switching

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	RENESAS [Renesas Technology Corp]

Trang chủ	http://www.renesas.com

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5 / 9 page

H7P1002DL, H7P1002DS

REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Page 5 of 8

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

100

125

150

Channel Temperature Tch (°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

IAP = –12 A

VDD = –50 V

duty < 0.1 %

≥ 50 Ω

–20

–5

–10

–15

–0.4

–0.8

–1.2

–1.6

–2.0

Pulse Test

–5 V

VGS = 0, 5 V

–10 V

Avalanche Test Circuit

Avalanche Waveform

VDS

IAP

V(BR)DSS

VDD

EAR =

• L • IAP

2 •

VDSS

VDSS – VDD

D.U.T

IAP

Monitor

VDS

Monitor

VDD

Ω

Vin

–15 V

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

0.3

0.1

0.03

0.01

100

1 m

10 m

100 m

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pul

PDM

D =

θch – c (t) = γ s (t) • θch – c

θch – c = 4.17°C/W, Tc = 25°C

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