HAT1093C datasheet(2/7 Pages) RENESAS

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HAT1093C

Preliminary

R07DS0605EJ0700 Rev.7.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

–12

—

ID = –10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±8

—

IG =

±100 μA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

μA

VGS =

±6.4V, VDS = 0

Drain to Source leakage current

IDSS

—

–1

μA

VDS =-12 V, VGS = 0

Gate to Source cutoff voltage

VGS(th)

–0.3

—

–1.2

ID = –1 mA, VDS = –10 V

Note3

Drain to Source on state resistance

RDS(on)

—

ID = –1.5 A, VGS = –4.5 V

Note3

—

ID = –1.5 A, VGS = –2.5 V

Note3

—

119

ID = –1.5 A, VGS = –1.8 V

Note3

Forward transfer admittance

|yfs|

6.5

—

ID = –1.5 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

940

—

VDS = –10 V, VGS = 0,

f = 1 MHz

Output capacitance

Coss

—

200

—

Reverse transfer capacitance

Crss

—

130

—

Total gate charge

—

VDS = –10 V, VGS = –4.5 V,

ID = –3 A

Gate to Source charge

Qgs

—

1.5

—

Gate to Drain charge

Qgd

—

3.5

—

Turn - on delay time

td(on)

—

VDS = –10 V, VGS = –4.5 V,

ID = –1.5 A, RL = 6.7

Ω,

Rg = 4.7

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

Body - Drain diode forward voltage

VDF

—

–0.8

–1.1

IF = –3 A, VGS = 0

Note:

3. Pulse test

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