CT30VM-8 datasheet(2/3 Pages) RENESAS

2 / 3 page

Feb.1999

µA

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT30VM-8

STROBE FLASHER USE

¡VCES ................................................................................ 400V

¡ICM ....................................................................................180A

CT30VM-8

450

—

±0.1

7.0

IC = 1mA, VGE = 0V

VCE = 400V, VGE = 0V

VGE =

±40V, VCE = 0V

VCE = 10V, IC = 1mA

V(BR)CES

ICES

IGES

VGE(th)

400

±30

±40

180

–40 ~ +150

°C

VCES

VGES

VGEM

ICM

Tstg

10.5MAX.

2.5

0.5

1.3

q GATE

w COLLECTOR

e EMITTER

r COLLECTOR

OUTLINE DRAWING

Dimensions in mm

APPLICATION

Strobe Flasher.

VGE = 0V

VCE = 0V, See notice 4

VCE = 0V, tw = 0.5s

See figure 1

Parameter

Conditions

Symbol

Ratings

Unit

Collector-emitter voltage

Gate-emitter voltage

Peak gate-emitter voltage

Collector current (Pulsed)

Junction temperature

Storage temperature

ELECTRICAL CHARACTERISTICS (Tj = 25

°C)

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

MAXIMUM RATINGS (Tc = 25

°C)

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

TO-220C

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