HVL147 datasheet(2/5 Pages) RENESAS

tên linh kiện	HVL147

Giải thích chi tiết về linh kiện	Silicon Epitaxial Trench Pin Diode for Antenna Switching

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HVL147

Rev.3.00 Jan 13, 2006 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

Forward current

100

Power dissipation

100

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

—

100

VR = 30 V

Forward voltage

—

1.00

IF = 10 mA

Capacitance

—

0.31

VR = 1 V, f = 1 MHz

—

2.5

—

IF = 2 mA, f = 100 MHz

Forward resistance

—

1.5

Ω

IF = 10 mA, f = 100 MHz

ESD-Capability *

—

100

—

C = 200 pF, R = 0

Ω, Both forward and

reverse direction 1 pulse.

Notes

: 1. Failure criterion ; IR > 100 nA at VR = 30 V

2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip

part is considered as unquestioned. Please kindly consider soldering nature.

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