HAT2282C datasheet(2/7 Pages) RENESAS

2 / 7 page

HAT2282C

Rev.1.00 Jan 26, 2006 page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to Source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±12

IG =

±100 µA, VDS = 0

Gate to Source leak current

IGSS

—

±10

µA

VGS =

±10 V, VDS = 0

Drain to Source leak current

IDSS

—

µA

VDS = 60 V, VGS = 0

Gate to Source cutoff voltage

VGS(off)

0.4

—

1.4

VDS = 10 V, ID = 1 mA

RDS(on)

—

173

225

Ω

ID = 0.8 A, VGS = 4.5 V

Note3

Drain to Source on state resistance

RDS(on)

—

207

290

Ω

ID = 0.8 A, VGS = 2.5 V

Note3

Forward transfer admittance

|yfs|

2.3

3.5

—

ID = 0.8 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

200

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Turn - on delay time

td(on)

—

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

ID = 0.8 A

VGS = 4.5 V, VDD = 10 V

RL = 1.25

Ω, Rg = 4.7 Ω

Total Gate charge

—

2.4

—

Gate to Source charge

Qgs

—

0.4

—

Gate to Drain charge

Qgd

—

0.6

—

VDD = 10 V, VGS = 4.5 V

ID = 1.5 A

Body - Drain diode forward voltage

VDF

—

0.8

1.1

IF = 1.5 A, VGS = 0

Note3

Notes: 3. Pulse test

HAT2282C bảng dữ liệu(PDF) 2 Page - Renesas Technology Corp

HAT2282C bảng dữ liệu(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL