2SC5050 datasheet(4/7 Pages) RENESAS

4 / 7 page

2SC5050

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

1.5

Collector current

Collector power dissipation

150

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

——V

C = 10 µA, IE = 0

Collector cutoff current

CBO

—

µA

CB = 12 V, IE = 0

CEO

——

CE = 8 V, RBE =

Emitter cutoff current

EBO

—

µA

EB = 1.5 V, IC = 0

DC current transfer ratio

120

250

CE = 5 V, IC = 20 mA

Collector output capacitance

Cob

—

0.6

1.1

CB = 5 V, IE = 0, f = 1 MHz

Gain bandwidth product

8.0

11.0

—

GHz

CE = 5 V, IC = 20 mA

S21 Parameter

|S21|

—

13.5

—

CE = 5 V, IC = 20 mA,

f = 1000 MHz

Power gain

11.0

14.0

—

CE = 5 V, IC = 20 mA,

f = 900 MHz

Noise figure

—

1.1

2.0

CE = 5 V, IC = 5 mA,

f = 900 MHz

See characteristic curves of 2SC4926.

2SC5050 bảng dữ liệu(PDF) 4 Page - Renesas Technology Corp

2SC5050 bảng dữ liệu(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL