STTH806 datasheet(1/5 Pages) STMICROELECTRONICS

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STTH806TTI

November 1999 - Ed: 3A

TURBOSWITCH

™ Tandem 600V ULTRA-FAST BOOST DIODE

®

The

TURBOSWITCH

"H"

is

an

ultra

high

performance diode composed of two 300V dice

in series. TURBOSWITCH "H" family drastically

cuts losses in the associated MOSFET when run at

high dIF/dt.

DESCRIPTION

ESPECIALLY SUITED AS BOOST DIODE IN

CONTINUOUS

MODE

POWER

FACTOR

CORRECTORS

AND

HARD

SWITCHING

CONDITIONS.

DESIGNED FOR HIGH DI/DT OPERATION.

ULTRA-FAST

RECOVERY

CURRENT

TO

COMPETE

WITH

GaAs

DEVICES.

SIZE

DIMINUTION OF MOSFET AND HEATSINKS

ALLOWED.

INTERNAL CERAMIC INSULATED PACKAGE

ALLOWS

FLEXIBLE

HEATSINKING

ON

COMMON OR SEPARATE HEATSINK.

MATCHED

DIODES

FOR

TYPICAL

PFC

APPLICATION WITHOUT VOLTAGE BALANCE

NETWORK.

INSULATED VERSION: :

Insulated voltage = 2500 V(RMS)

Capacitance = 7 pF

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

RMS forward current

14

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

80

A

Tstg

Storage temperature range

-65 +150

°C

Tj

Maximum operating junction temperature

+ 150

°C

ABSOLUTE RATINGS (limiting values for both diodes in series)

IF(AV)

8 A

VRRM

600 V (in series)

Tj (max)

150 °C

VF (max)

2.6 V

IRM (typ.)

4 A

MAJOR PRODUCTS CHARACTERISTICS

1

2

3

12

3

Insulated TO-220AB

TM: TURBOSWITCH is a trademark of STMicroelectronics

1/5

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