2SD1113 datasheet(4/6 Pages) RENESAS

tên linh kiện	2SD1113

Giải thích chi tiết về linh kiện	Silicon NPN Triple Diffused

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2SD1113(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

300

—

500

C = 0.1 mA, IE = 0

Collector to emitter sustain

voltage

CEO(sus)

300

—

C = 3 A, PW = 50 µs,

f = 50 Hz, L = 10 mH

Emitter to base breakdown

voltage

(BR)EBO

7—

—

E = 50 mA, IC = 0

Collector cutoff current

CEO

—

100

µAV

CE = 300 V, RBE = ∞

DC current transfer ratio

500

—

CE = 2 V, IC = 4 A*

Collector to emitter saturation

voltage

CE(sat)

—

1.5

C = 4 A, IB = 40 mA*

Base to emitter saturation

voltage

BE(sat)

—

2.0

C = 4 A, IB = 40 mA*

Turn on time

—

2.0

—

µsI

C = 4 A, IB1 = –IB2 = 40 mA

Turn off time

off

—23—

µsI

C = 4 A, IB1 = –IB2 = 40 mA

Note:

1. Pulse test.

100

150

Case temperature TC (°C)

Maximum Collector Dissipation Curve

0.005

0.01

0.1

1.0

Collector to emitter voltage VCE (V)

0.5 1.0 2

10 20

50 100200 500

Area of Safe Operation

iC (peak)

IC (max)

Ta = 25

°C

1 shot pulse

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