HAF2017 datasheet(3/9 Pages) RENESAS

3 / 9 page

HAF2017(L), HAF2017(S)

Rev.2.00, Apr.13.2004, page 3 of 8

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Darin current

ID1

——A

VGS = 3.5 V, VDS = 2 V

Darin current

ID2

——

VGS = 1.2 V, VDS = 2 V

Drain to source breakdown voltage

V(BR)DSS

——V

ID = 10 mA, VGS =0

Gate to source breakdown

V(BR)GSS

——V

IG = 800 µA, VDS =0

voltage

V(BR)GSS

–2.5

—

IG = –100 µA, VDS =0

Gate to source leak current

IGSS1

—

100

µA

VGS = 8 V, VDS =0

IGSS2

—

µA

VGS = 3.5 V, VDS =0

IGSS3

——

µA

VGS = 1.2 V, VDS =0

IGSS4

—

–100

µA

VGS = –2.4 V, VDS =0

Input current (shut down)

IGS(OP)1

—0.8

—

VGS = 8 V, VDS =0

IGS(OP)2

—0.35

—

VGS = 3.5 V, VDS =0

Zero gate voltage drain current

IDSS

—

µA

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.4

—

2.6

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|6

—

ID =10 A, VDS =10 V

Note3

Static drain to source on state

RDS(on)

—

3553m

Ω

ID = 10 A, VGS = 4.5 V

Note3

resistance

RDS(on)

—

2743m

Ω

ID = 10 A, VGS = 10 V

Note3

Output capacitance

Coss

—

460

―

VDS = 10 V, VGS =0, f = 1 MHz

Turn-on delay time

td(on)

—

8.7

―

µs

VGS = 5 V, ID= 10 A, RL = 3

Ω

Rise time

—

44.6

—

µs

Turn-off delay time

td(off)

—

―

µs

Fall time

—

2.6

—

µs

Body-drain diode forward voltage

VDF

—0.9

—

IF = 20A, VGS = 0

Body-drain diode reverse recovery

time

trr

—

120

—

IF = 20 A, VGS = 0,

diF/dt = 50 A/µs

Over load shut down operation

tos1

—0.97

—

VGS = 5 V, VDD = 16 V

time

Note4

tos2

—0.57

—

VGS = 5 V, VDD = 24 V

Notes: 3. Pulse test

4. Include the time shift based on increasing of channel temperature when operate under over load condition.

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