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HAF1008 bảng dữ liệu(PDF) 3 Page - Renesas Technology Corp |
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HAF1008 bảng dữ liệu(HTML) 3 Page - Renesas Technology Corp |
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3 / 11 page ![]() HAF1008(L), HAF1008(S) Rev.1.00, May.13.2003, page 3 of 11 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 –7 ——A VGS = –3.5 V, VDS = –2 V Drain current ID2 — — –10 mA VGS = –1.2 V, VDS = –2 V Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –16 — — V IG = –800 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS 2.5 ——V IG = 100 µA, VDS = 0 IGSS1 — — –100 µA VGS = –8 V, VDS = 0 IGSS2 — — –50 µA VGS = –3.5 V, VDS = 0 IGSS3 ——–1 µA VGS = –1.2 V, VDS = 0 Gate to source leak current IGSS4 — — 100 µA VGS = 2.4 V, VDS = 0 IGS(OP)1 — –0.8 — mA VGS = –8 V, VDS = 0 Input current (shut down) IGS(OP)2 — –0.35 — mA VGS = –3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.1 — –2.15 V VDS = –10 V, ID = –1 mA Forward transfer admittance |yfs| 10 18.5 — S ID = –10 A, VDS = –10 V Note3 RDS(on) — 6080m Ω ID = –10 A, VGS = –4 V Note3 Static drain to source on state resistance RDS(on) — 4254m Ω ID = –10 A, VGS = –10 V Note3 Output capacitance Coss — 865 ― pF VDS = –10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 5.7 ― µs Rise time tr — 26 — µs Turn-off delay time td(off) — 6.5 ― µs Fall time tf — 9 — µs VGS = -10 V, ID= –10 A, RL = 3 Ω Body–drain diode forward voltage VDF —-0.9 — V IF = –20 A, VGS = 0 Body–drain diode reverse recovery time trr — 100 — ns IF = –20 A, VGS = 0 diF/dt = 50A/µs tos1 —1.84 — ms VGS = –5 V, VDD = –16 V Over load shut down operation time Note4 tos2 —1 —ms VGS = –5 V, VDD = –24 V Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. |
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