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HAF1008 bảng dữ liệu(PDF) 3 Page - Renesas Technology Corp

tên linh kiện HAF1008
Giải thích chi tiết về linh kiện  Silicon P Channel MOS FET Series Power Switching
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HAF1008 bảng dữ liệu(HTML) 3 Page - Renesas Technology Corp

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HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 3 of 11
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
ID1
–7
——A
VGS = –3.5 V, VDS = –2 V
Drain current
ID2
—
—
–10
mA
VGS = –1.2 V, VDS = –2 V
Drain to source breakdown
voltage
V(BR)DSS –60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS –16
—
—
V
IG = –800 µA, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS 2.5
——V
IG = 100 µA, VDS = 0
IGSS1
—
—
–100
µA
VGS = –8 V, VDS = 0
IGSS2
—
—
–50
µA
VGS = –3.5 V, VDS = 0
IGSS3
——–1
µA
VGS = –1.2 V, VDS = 0
Gate to source leak current
IGSS4
—
—
100
µA
VGS = 2.4 V, VDS = 0
IGS(OP)1 —
–0.8
—
mA
VGS = –8 V, VDS = 0
Input current (shut down)
IGS(OP)2 —
–0.35
—
mA
VGS = –3.5 V, VDS = 0
Zero gate voltage drain
current
IDSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source cutoff voltage VGS(off)
–1.1
—
–2.15
V
VDS = –10 V, ID = –1 mA
Forward transfer admittance |yfs|
10
18.5
—
S
ID = –10 A, VDS = –10 V
Note3
RDS(on)
—
6080m
Ω
ID = –10 A, VGS = –4 V
Note3
Static drain to source on state
resistance
RDS(on)
—
4254m
Ω
ID = –10 A, VGS = –10 V
Note3
Output capacitance
Coss
—
865
―
pF
VDS = –10 V, VGS = 0, f = 1 MHz
Turn-on delay time
td(on)
—
5.7
―
µs
Rise time
tr
—
26
—
µs
Turn-off delay time
td(off)
—
6.5
―
µs
Fall time
tf
—
9
—
µs
VGS = -10 V, ID= –10 A, RL = 3
Ω
Body–drain diode forward
voltage
VDF
—-0.9
—
V
IF = –20 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
100
—
ns
IF = –20 A, VGS = 0
diF/dt = 50A/µs
tos1
—1.84
—
ms
VGS = –5 V, VDD = –16 V
Over load shut down
operation time
Note4
tos2
—1
—ms
VGS = –5 V, VDD = –24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.



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