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R5F64111NFB bảng dữ liệu(PDF) 60 Page - Renesas Technology Corp

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R01DS0062EJ0130 Rev.1.30
Page 60 of 93
Mar 3, 2014
R32C/111 Group
5. Electrical Characteristics
Note:
1.
The value listed in the table is the minimum VCC1 to retain RAM data.
Notes:
1.
Program/erase definition
This value represents the number of erasures per block.
When the number of program/erase cycles is n, each block can be erased n times.
For example, if a 4-word write is performed in 512 different addresses in the 4-Kbyte block A and
then the block is erased, this is counted as a single program/erase operation.
However, the same address cannot be written to more than once per erasure (overwrite disabled).
2.
Data retention includes periods when no supply voltage is applied and no clock is provided.
3.
Contact a Renesas Electronics sales office for data retention times other than the above condition.
Table 5.7
Electrical Characteristics of RAM
(VCC1 =VCC2 = 3.0 to 5.5 V, VSS = 0 V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
Condition
Value
Unit
Min.
Typ.
Max.
VRDR
RAM data retention voltage (1)
In stop mode
2.0
V
Table 5.8
Electrical Characteristics of Flash Memory
(VCC1 = VCC2 = 3.0 to 5.5 V, VSS = 0 V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Program/erase cycles (1)
Program area
1000
Cycles
Data area
10000
Cycles
—
4-word program time
Program area
150
900
µs
Data area
300
1700
µs
—
Lock bit program time
Program area
70
500
µs
Data area
140
1000
µs
—
Block erasure time
4-Kbyte block
0.12
3.0
s
32-Kbyte block
0.17
3.0
s
64-Kbyte block
0.20
3.0
s
—
Data retention (2)
Ta = 55°C (3)
10
Years



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