STTA2512 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery

time

Tj = 25

°C

IF = 0.5 A

IR = 1A

Irr = 0.25A

IF =1 A dIF/dt =-50A/

µsVR =30V

110

IRM

Maximum reverse

recovery current

Tj = 125

°C VR = 600V IF =25A

dIF/dt = -200 A/

µs

dIF/dt = -500 A/

µs45

S factor

Softness factor

Tj = 125

°CVR = 600V IF =25A

dIF/dt = -500 A/

µs

1.2

DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

tfr

Forward recovery time

Tj = 25

°C

IF =25 A, dIF/dt = 200 A/

µs

measured at 1.1

× VFmax

900

VFp

Peak forward voltage

Tj = 25

°C

IF =25A, dIF/dt = 200 A/

µs

IF =40A, dIF/dt = 500 A/

µs

TURN-ON SWITCHING

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VF *

Forward voltage drop

IF =25A

Tj = 25

°C

Tj = 125

°C

1.3

2.1

1.9

IR **

Reverse leakage current

VR =0.8 x

VRRM

Tj = 25

°C

Tj = 125

°C

2.0

150

µA

Vto

Threshold voltage

Ip < 3.IF(AV)

Tj = 125

°C

1.52

Dynamic resistance

Ω

Test pulses :

* tp = 380

µs, δ <2%

** tp = 5 ms ,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS (per diode)

To evaluate the maximum conduction losses use the following equation :

P= Vto xIF(AV) +Rd x IF

(RMS)

Symbol

Parameter

Conditions

Value

Unit

Rth(j-c)

Junction to case thermal

resistance

ISOTOP

Per diode

1.4

°C/W

ISOTOP

Total

0.75

SOD93

1.2

Rth(c)

Coupling thermal resistance

ISOTOP

Coupling

0.1

°C/W

Conduction power dissipation

IF(AV) = 25A

δ =0.5

ISOTOP

Tc= 70

°C57

SOD93

Tc= 82

°C

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

ISOTOP

Tc= 62

°C

62.5

SOD93

Tc= 75

°C

THERMAL AND POWER DATA (per diode)

STTA2512P / STTA5012TV1/2

2/9

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