RJK0331DPB datasheet(2/7 Pages) RENESAS

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RJK0331DPB

REJ03G1640-0400 Rev.4.00 Apr 10, 2008

Page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

µA

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

VDS = 10 V, ID = 1 mA

RDS(on)

—

2.6

3.4

Ω

ID = 20 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

3.5

4.9

Ω

ID = 20 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

ID = 20 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

3380

—

Output capacitance

Coss

—

660

—

Reverse transfer capacitance

Crss

—

190

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Gate Resistance

—

0.6

—

Ω

Total gate charge

—

Gate to source charge

Qgs

—

7.8

—

Gate to drain charge

Qgd

—

4.8

—

VDD = 10 V, VGS = 4.5 V,

ID = 40 A

Turn-on delay time

td(on)

—

5.8

—

Rise time

—

3.9

—

Turn-off delay time

td(off)

—

Fall time

—

4.6

—

VGS = 10 V, ID = 20 A,

VDD

≅ 10 V, RL = 0.5 Ω,

Rg = 4.7

Ω

Body–drain diode forward voltage

VDF

—

0.82

1.07

IF = 40 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

IF = 40 A, VGS = 0

diF/ dt = 100 A/

µs

Body–drain diode reverse

recovery charge

Qrr

—

Notes: 4. Pulse test

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