2SD974 datasheet(3/6 Pages) RENESAS

tên linh kiện	2SD974

Giải thích chi tiết về linh kiện	Silicon NPN Epitaxial

PDF	6 Pages

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2SD974

Rev.3.00 Oct 06, 2006 page 3 of 5

Main Characteristics

150

100

Ambient Temperature Ta (

°C)

1.2

0.8

0.4

Maximum Collector Dissipation Curve

100

150

Collector to Emitter Voltage VCE (V)

Area of Safe Operaton

(60 V, 0.5 A)

(20 V, 4 A)

f = 15.75 kHz

Ta = 25

°C

0.2

0.8

0.4

1.0

0.6

Collector to Emitter Voltage VCE (V)

0.5

0.4

0.3

0.2

0.1

Typical Output Characteristics

IB = 0

1.5

0.5 mA

0.1

0.5

2.0

0.2

1.0

0.05

0.02

Collector Current IC (A)

1,000

500

100

200

DC Current Transfer Ratio vs.

Collector Current

VCE = 5 V

Pulse

Ta = –25

°C

0.005

0.02

0.1

0.2

0.002

0.01

0.05

Base Current IB (A)

1.0

0.5

0.2

0.1

0.05

Collector to Emitter Saturation

Voltage vs. Base Current

Pulse

IC = 0.5 A

1.5 A

1 A

0.5

0.2

0.1

1.0

0.05

0.02

Collector Current IC (A)

0.5

1.0

0.1

0.2

0.02

0.05

Collector to Emitter Saturation Voltage vs.

Collector Current

Pulse

IC/IB = 20

Ta = –25

°C

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