2SC5624 datasheet(2/7 Pages) RENESAS

tên linh kiện	2SC5624

Giải thích chi tiết về linh kiện	Silicon NPN Epitaxial High Frequency Low Noise Amplifier

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	RENESAS [Renesas Technology Corp]

Trang chủ	http://www.renesas.com

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2 / 7 page

2SC5624

Rev.3.00, Feb.21.2005, page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector cutoff current

ICBO

—

µA

VCB = 8 V, IE = 0

Collector cutoff current

ICEO

—

µA

VCE = 3 V, RBE =

∞

Emitter cutoff current

IEBO

—

µA

VEB = 0.8 V, IC = 0

DC current transfer ratio

hFE

120

160

VCE = 2 V, IC = 20 mA

Collector output capacitance

Cob

—

0.3

0.6

VCB = 2 V, IE = 0, f = 1 MHz

Gain bandwidth product

—

GHz

VCE = 2 V, IC = 30 mA, f = 2 GHz

Power gain

—

VCE = 2 V, IC = 30 mA, f = 1.8 GHz

Noise figure

—

1.2

1.6

VCE = 2 V, IC = 5 mA, f = 1.8 GHz

Main Characteristics

200

150

100

150

200

100

200

100

Ambient Temperature

Ta (°C)

Maximum Collector Dissipation Curve

Collector Current

IC (mA)

DC Current Transfer Ratio vs.

Collector Current

= 2 V

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