STPS80H100TV datasheet(1/4 Pages) STMICROELECTRONICS

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STPS80H100TV

®

July 1999 - Ed: 3A

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage dual Schottky barrier rectifier

designed for high frequency telecom and

computer Switched Mode Power Supplies

and other power converters.

Packaged in ISOTOP, this device is intended for

use in medium voltage operation, and particu-

larly, in high frequen cy circuitries where low

switching losses and low noise are required.

DESCRIPTION

ISOTOPTM

K2

K1

A2

A1

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

RMS forward current

125

A

IF(AV)

Average forward current

Tc = 120

°C

δ = 0.5

Per diode

Per device

40

80

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

700

A

IRRM

Repetitive peak reverse current

tp = 2

µs square F = 1kHz

2

A

IRSM

Non repetitive peak reverse current

tp = 100

µs square

5

A

Tstg

Storage temperature range

- 55 to+ 150

°C

Tj

Maximum operating junction temperature *

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/

µs

ABSOLUTE RATINGS (limiting values, per diode)

IF(AV)

2 x 40 A

VRRM

100 V

Tj (max)

150

°C

VF (max)

0.65 V

MAIN PRODUCT CHARACTERISTICS

NEGLIGIBLESWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGECUR-

RENT AND FORWARD VOLTAGE DROP

AVALANCHE RATED

LOW INDUCTANCE PACKAGE

INSULATED PACKAGE :

Insulated voltage = 2500 V(RMS)

Capacitance = 45 pF

FEATURES AND BENEFITS

*:

dPtot

dTj

<

1

Rth

(j−a)

thermal runaway condition for a diode on its own heatsink

1/4

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