2SB1002 datasheet(3/6 Pages) RENESAS

tên linh kiện	2SB1002

Giải thích chi tiết về linh kiện	Silicon PNP Epitaxial

PDF	6 Pages

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2SB1002

Rev.2.00 Aug 10, 2005 page 3 of 5

Main Characteristics

0.4

0.8

1.2

Ambient Temperature Ta (°C)

Maximum Collector Dissipation Curve

100

150

–100

–80

–60

–40

–20

–2

–4

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

–6

–8

–10

IB = 0

–0.05 mA

–0.1

–0.15

–0.25

–0.35

–0.45

–0.2

–0.3

–0.4

–2.0

–1.6

–1.2

–0.8

–0.4

–0.8

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

–1.2

–1.6

–2.0

IB = 0

–50

–40

–30

–20

–10

–1,000

–300

–100

–30

–10

–3

–1

–0.2

–0.4

Base to Emitter Voltage VBE (V)

Typical Transfer Characteristics

–0.6

–0.8

–1.0

VCE = –2 V

–1

10,000

3,000

1,000

300

100

–3

–10

–30

Collector Current IC (mA)

DC Current Transfer Ratio vs.

Collector Current

–100 –300 –1,000

Pulse

VCE = –2 V

–0.3

3,000

1,000

300

100

–1.0

–3

Collector to Base Voltage VCB (V)

Collector Output Capacitance

vs. Collector to Base Voltage

–10

–30

–100 –300

f = 1 MHz

IE = 0

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