Electrical characteristics

STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

Rise time

(see Figure 20)

20

20

ns

ns

Turn-off delay time

Fall time

(see Figure 20)

55

30

ns

ns

Off-voltage rise time

Fall time

Cross-over time

(see Figure 20)

18

18

36

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

10

36

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

570

4.3

15

ns

µC

A

Table 8.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

Gate-source breakdown

voltage

Igs=± 1mA (open drain)

30

V