MRF284 datasheet(8/12 Pages) FREESCALE

8 / 12 page

RF Device Data

Freescale Semiconductor

MRF284LR1 MRF284LSR1

TYPICAL CHARACTERISTICS

Figure 10. DC Safe Operating Area

VDD, DRAIN SUPPLY VOLTAGE (Vdc)

Figure 11. Capacitance versus

Drain Source Voltage

VDS, DRAIN SOURCE VOLTAGE (VOLTS)

100

Figure 12. Class A Third Order Intercept Point

Pin, INPUT POWER (dBm)

−20

−80

Crss

FUNDAMENTAL

3rd Order

Coss

545

−10

−30

−40

−60

−50

−70

Tflange = 75°C

Tflange = 100°C

TJ = 175°C

Ciss

−90

VDD = 26 Vdc

IDQ = 1.8 Adc

f1 = 2000.0 MHz

f2 = 2000.1 MHz

1.0

Figure 13. 1920-2000 MHz Broadband Circuit Performance

f, FREQUENCY (MHz)

1920

1940

1960

1980

2000

VDD = 26 Vdc

Pout = 30 W (PEP), IDQ = 200 mA

Two−Tone

Frequency Delta = 100 kHz

Gps

IMD

VSWR

−32

−40

−36

2.0

3.0

TJ, JUNCTION TEMPERATURE (°C)

250

200

150

100

1.E+10

1.E+09

1.E+07

1.E+06

1.E+05

This graph displays calculated MTTF in hours x ampere2 drain current.

Life tests at elevated temperature have correlated to better than

±10%

of the theoretical prediction for metal failure. Divide MTTF factor by ID2

for MTTF in a particular application.

1.E+08

1.E+04

Figure 14. MTTF Factor versus Junction Temperature

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