MRF19030LR3 MRF19030LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with

frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and

multicarrier amplifier applications.

• CDMA Performance @ 1990 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

885 kHz — -47 dBc in 30 kHz BW

1.25 MHz — -55 dBc in 12.5 kHz BW

2.25 MHz — -55 dBc in 1 MHz BW

Output Power — 4.5 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 17%

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

83.3

0.48

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

2.1

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Document Number: MRF19030

Rev. 12, 5/2006

Freescale Semiconductor

Technical Data

MRF19030LR3

MRF19030LSR3

1930-1990 MHz, 30 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465E-04, STYLE 1

NI-400

MRF19030LR3

CASE 465F-04, STYLE 1

NI-400S

MRF19030LSR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.